{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9673216","patent":{"patent_number":"US-9673216","title":"Method of forming memory cell film","assignee":null,"inventors":[],"filing_date":"2016-07-18T00:00:00.000Z","publication_date":"2017-06-06T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":20,"abstract":"Disclosed herein are methods of forming memory cell films in 3D memory. An opening having a sidewall may be formed through a stack of alternating layers of silicon oxide and silicon nitride. Bird's beaks may be formed in the silicon nitride at interfaces with the silicon oxide. In one aspect, bird's beaks are formed using a wet SiN etch. In one aspect, bird's beaks are formed by oxidizing SiN. A dilute hydrofluoric acid (DHF) clean may be performed within the opening after forming the bird's beaks in the silicon nitride. A memory cell film may be formed in the opening after performing the DHF clean. The memory cell film is straight, or nearly straight, from top to bottom in a memory hole. The memory cell film is not as susceptible to parasitic charge trapping as a memory cell film having a wavy contour. Therefore, neighbor WL interference may be reduced."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of forming memory cell film","description":"Disclosed herein are methods of forming memory cell films in 3D memory. An opening having a sidewall may be formed through a stack of alternating layers of silicon oxide and silicon nitride. Bird's be","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9673216","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9673216","citation_suggestion":"Patentable. \"Method of forming memory cell film\" (US-9673216). https://patentable.app/patents/US-9673216","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9673216","json":"https://patentable.app/api/llm-context/US-9673216","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T19:29:29.308Z"}