{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9673270","patent":{"patent_number":"US-9673270","title":"Metal insulator metal capacitor and method for making the same","assignee":null,"inventors":[],"filing_date":"2015-09-28T00:00:00.000Z","publication_date":"2017-06-06T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A semiconductor device includes one or more metal-insulator-metal (MiM) capacitors. The semiconductor device includes a bottom electrode, a dielectric layer located above, and in physical contact with, the bottom electrode, a top electrode located above, and in physical contact with, the dielectric layer, a first top contact contacting the top electrode, a first bottom contact contacting the bottom electrode from a top electrode direction, a first metal bump connecting to the top contact, and a second metal bump connecting to the bottom contact. The top electrode has a smaller area than the bottom electrode. The bottom electrode, the dielectric layer, and the top electrode is a MiM capacitor. Top electrodes of a number of MiM capacitors and bottom electrodes of a number of MiM capacitors are daisy chained to allow testing of the conductivity of the electrodes."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Metal insulator metal capacitor and method for making the same","description":"A semiconductor device includes one or more metal-insulator-metal (MiM) capacitors. The semiconductor device includes a bottom electrode, a dielectric layer located above, and in physical contact with","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9673270","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9673270","citation_suggestion":"Patentable. \"Metal insulator metal capacitor and method for making the same\" (US-9673270). https://patentable.app/patents/US-9673270","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9673270","json":"https://patentable.app/api/llm-context/US-9673270","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T06:59:15.428Z"}