{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9673278","patent":{"patent_number":"US-9673278","title":"Method of preventing drain and read disturbances in non-volatile memory device","assignee":null,"inventors":[],"filing_date":"2015-08-06T00:00:00.000Z","publication_date":"2017-06-06T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":9,"abstract":"A source-drain structure and method of manufacturing the same are disclosed. The source-drain structure includes a substrate containing a drain region and a source region. The drain region includes a lightly-doped ultra-shallow junction and a heavily-doped region, and a drain-substrate junction disposed in the vicinity of a junction between a side portion and a bottom portion of the lightly-doped ultra-shallow junction and the substrate, a plurality of impurity ions in the drain-substrate junction and a plurality of impurity ions in the lightly-doped ultra-shallow junction are opposite-conductivity type ions. The drain-substrate junction can smooth out the steep surface of the lightly-doped ultra-shallow junction to minimize the maximum electric field and reduce the ion flow close to the channel, and effectively reduce the inter-band tunneling hot electron effect."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of preventing drain and read disturbances in non-volatile memory device","description":"A source-drain structure and method of manufacturing the same are disclosed. The source-drain structure includes a substrate containing a drain region and a source region. The drain region includes a ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9673278","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9673278","citation_suggestion":"Patentable. \"Method of preventing drain and read disturbances in non-volatile memory device\" (US-9673278). https://patentable.app/patents/US-9673278","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9673278","json":"https://patentable.app/api/llm-context/US-9673278","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T03:54:43.709Z"}