{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9673299","patent":{"patent_number":"US-9673299","title":"Method for manufacturing split-gate power device","assignee":null,"inventors":[],"filing_date":"2016-03-15T00:00:00.000Z","publication_date":"2017-06-06T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":18,"abstract":"The present invention relates to the field of manufacturing technologies of semiconductor power devices, and more particularly to a method for manufacturing a split-gate power device. In the method for manufacturing a split-gate power device according to the present invention, lateral etching is added to form lateral recesses of a control gate groove below a first insulating film in a process of forming the control gate groove by etching, and therefore, after a first conductive film is deposited, the first conductive film can be directly etched by using the first insulating film as a mask to form control gates. The technical process of the present invention is simplified, reliable and easy to control, and can greatly improve the yield of the split-gate power device. The present invention is particularly suitable for the manufacture of 25V-200V semiconductor power devices."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for manufacturing split-gate power device","description":"The present invention relates to the field of manufacturing technologies of semiconductor power devices, and more particularly to a method for manufacturing a split-gate power device. In the method fo","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9673299","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9673299","citation_suggestion":"Patentable. \"Method for manufacturing split-gate power device\" (US-9673299). https://patentable.app/patents/US-9673299","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9673299","json":"https://patentable.app/api/llm-context/US-9673299","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T05:35:39.736Z"}