{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9673300","patent":{"patent_number":"US-9673300","title":"Semiconductor devices including a gate core and a fin active core and methods of fabricating the same","assignee":null,"inventors":[],"filing_date":"2015-08-07T00:00:00.000Z","publication_date":"2017-06-06T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":20,"abstract":"Semiconductor devices and methods of fabricating the same are provided. The methods may include forming an isolation region defining a fin active region, forming a sacrificial field gate pattern on the isolation region and forming a sacrificial fin gate pattern on the fin active region. The method may also include forming a field gate cut zone comprising a first recess exposing a surface of the isolation region and a fin active cut zone comprising a second recess exposing a surface of the fin active region, forming a fin active recess in the second recess of the fin active cut zone and forming a field gate core and a fin active core by forming an insulation material in the first recess of the field gate cut zone and the fin active recess, respectively."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor devices including a gate core and a fin active core and methods of fabricating the same","description":"Semiconductor devices and methods of fabricating the same are provided. The methods may include forming an isolation region defining a fin active region, forming a sacrificial field gate pattern on th","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9673300","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9673300","citation_suggestion":"Patentable. \"Semiconductor devices including a gate core and a fin active core and methods of fabricating the same\" (US-9673300). https://patentable.app/patents/US-9673300","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9673300","json":"https://patentable.app/api/llm-context/US-9673300","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T07:04:55.864Z"}