{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9673307","patent":{"patent_number":"US-9673307","title":"Lateral bipolar junction transistor with abrupt junction and compound buried oxide","assignee":null,"inventors":[],"filing_date":"2016-04-13T00:00:00.000Z","publication_date":"2017-06-06T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A lateral bipolar junction transistor (LBJT) device that may include a dielectric stack including a pedestal of a base region passivating dielectric and a nucleation dielectric layer; and a base region composed of a germanium containing material or a type III-V semiconductor material in contact with the pedestal of the base region passivating dielectric. An emitter region and collector region may be present on opposing sides of the base region contacting a sidewall of the pedestal of the base region passivating dielectric and an upper surface of the nucleation dielectric layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Lateral bipolar junction transistor with abrupt junction and compound buried oxide","description":"A lateral bipolar junction transistor (LBJT) device that may include a dielectric stack including a pedestal of a base region passivating dielectric and a nucleation dielectric layer; and a base regio","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9673307","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9673307","citation_suggestion":"Patentable. \"Lateral bipolar junction transistor with abrupt junction and compound buried oxide\" (US-9673307). https://patentable.app/patents/US-9673307","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9673307","json":"https://patentable.app/api/llm-context/US-9673307","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T08:18:58.426Z"}