{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9673308","patent":{"patent_number":"US-9673308","title":"Semiconductor device manufacturing method","assignee":null,"inventors":[],"filing_date":"2013-12-13T00:00:00.000Z","publication_date":"2017-06-06T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":6,"abstract":"According to the present invention, since the buffer layer is formed by multiple ion implantations of different acceleration energies and the non-diffusion region in which impurity do not diffuse is left between the buffer layer and the collector layer, the semiconductor device which can supply sufficient holes to the drift layer at the turn-off can be manufactured while the withstand voltage is ensured."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device manufacturing method","description":"According to the present invention, since the buffer layer is formed by multiple ion implantations of different acceleration energies and the non-diffusion region in which impurity do not diffuse is l","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9673308","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9673308","citation_suggestion":"Patentable. \"Semiconductor device manufacturing method\" (US-9673308). https://patentable.app/patents/US-9673308","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9673308","json":"https://patentable.app/api/llm-context/US-9673308","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T03:39:41.884Z"}