{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9673313","patent":{"patent_number":"US-9673313","title":"Silicon carbide semiconductor device and fabrication method thereof","assignee":null,"inventors":[],"filing_date":"2013-03-18T00:00:00.000Z","publication_date":"2017-06-06T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":5,"abstract":"A silicon carbide semiconductor device has a first-conductivity-type semiconductor layer having a lower impurity concentration and formed on a first-conductivity-type semiconductor substrate, a second-conductivity-type semiconductor layer having a higher impurity concentration and selectively formed in the first-conductivity-type semiconductor layer, a second-conductivity-type base layer having a lower impurity concentration formed on a surface of the second-conductivity-type semiconductor layer, a first-conductivity-type source region selectively formed in a surface layer of the base layer, a first-conductivity-type well region formed to penetrate the base layer from a surface to the first-conductivity-type semiconductor layer, and a gate electrode formed via a gate insulation film on a surface of the base layer interposed between the source region and the well region. Portions of the respective second-conductivity-type semiconductor layers of different cells can be connected to each other by a connecting portion in a region under the well region."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Silicon carbide semiconductor device and fabrication method thereof","description":"A silicon carbide semiconductor device has a first-conductivity-type semiconductor layer having a lower impurity concentration and formed on a first-conductivity-type semiconductor substrate, a second","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9673313","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9673313","citation_suggestion":"Patentable. \"Silicon carbide semiconductor device and fabrication method thereof\" (US-9673313). https://patentable.app/patents/US-9673313","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9673313","json":"https://patentable.app/api/llm-context/US-9673313","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T08:04:40.592Z"}