{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9673321","patent":{"patent_number":"US-9673321","title":"Pillar-shaped semiconductor device and method for producing the same","assignee":null,"inventors":[],"filing_date":"2015-07-22T00:00:00.000Z","publication_date":"2017-06-06T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":9,"abstract":"An opening extending through a gate insulating layer and a gate conductor layer is formed in the circumferential portion of a Si pillar at an intermediate height of the Si pillar. A laminated structure including two sets each including a Ni film, a poly-Si layer containing donor or acceptor impurity atoms, and a SiO2 layer is formed so as to surround the opening. A heat treatment is carried out to form silicide from the poly-Si layers and this silicide formation causes the resultant NiSi layers to protrude and come into contact with the side surface of the Si pillar. The donor or acceptor impurity atoms diffuse from the NiSi layers into the Si pillar to thereby form an N+ region and a P+ region serving as a source or a drain of SGTs."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Pillar-shaped semiconductor device and method for producing the same","description":"An opening extending through a gate insulating layer and a gate conductor layer is formed in the circumferential portion of a Si pillar at an intermediate height of the Si pillar. A laminated structur","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9673321","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9673321","citation_suggestion":"Patentable. \"Pillar-shaped semiconductor device and method for producing the same\" (US-9673321). https://patentable.app/patents/US-9673321","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9673321","json":"https://patentable.app/api/llm-context/US-9673321","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T09:33:28.273Z"}