{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9673325","patent":{"patent_number":"US-9673325","title":"FinFET device having a material formed on reduced source/drain region and method of forming the same","assignee":null,"inventors":[],"filing_date":"2015-09-01T00:00:00.000Z","publication_date":"2017-06-06T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":14,"abstract":"A semiconductor device includes a fin structure of a first semiconductor material on a substrate. The fin structure has a source region, a drain region, and a channel region between the source region and the drain region. The device also has a gate structure overlying the fin structure. The source region includes an inner portion of the first semiconductor material and an outer portion of a second semiconductor material overlying a top surface and side surfaces of the inner portion. The drain region includes an inner portion of the first semiconductor material and an outer portion of the second semiconductor material overlying a top surface and side surfaces of the inner portion."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"FinFET device having a material formed on reduced source/drain region and method of forming the same","description":"A semiconductor device includes a fin structure of a first semiconductor material on a substrate. The fin structure has a source region, a drain region, and a channel region between the source region ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9673325","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9673325","citation_suggestion":"Patentable. \"FinFET device having a material formed on reduced source/drain region and method of forming the same\" (US-9673325). https://patentable.app/patents/US-9673325","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9673325","json":"https://patentable.app/api/llm-context/US-9673325","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T15:39:56.722Z"}