{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9673332","patent":{"patent_number":"US-9673332","title":"Circuit substrate manufacturing method","assignee":null,"inventors":[],"filing_date":"2016-05-25T00:00:00.000Z","publication_date":"2017-06-06T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":5,"abstract":"A method of manufacturing a circuit substrate comprising a semiconductor element disposed on a transparent substrate, includes: forming an island-shaped oxide semiconductor layer on the transparent substrate; forming a patterned etch-stop layer made of an insulating material so as to cover at least a center portion of the island-shaped oxide semiconductor layer; depositing a conductive layer over an entire surface of the transparent substrate including a region over the patterned etch-stop layer; forming a patterned resist on the conductive layer; and etching the conductive layer using the patterned resist as a mask to form a patterned conductive layer from the conductive layer, wherein the patterned conductive layer includes a source electrode, a source wiring line, and a drain electrode, and continuing to etch the island-shaped oxide semiconductor thereunder using the patterned conductive layer and the patterned etch-stop layer as a mask to form a cutout in the island-shaped oxide semiconductor layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Circuit substrate manufacturing method","description":"A method of manufacturing a circuit substrate comprising a semiconductor element disposed on a transparent substrate, includes: forming an island-shaped oxide semiconductor layer on the transparent su","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9673332","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9673332","citation_suggestion":"Patentable. \"Circuit substrate manufacturing method\" (US-9673332). https://patentable.app/patents/US-9673332","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9673332","json":"https://patentable.app/api/llm-context/US-9673332","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T08:03:53.626Z"}