{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9679625","patent":{"patent_number":"US-9679625","title":"Perpendicular magnetic tunnel junction (pMTJ) with in-plane magneto-static switching-enhancing layer","assignee":null,"inventors":[],"filing_date":"2015-11-02T00:00:00.000Z","publication_date":"2017-06-13T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C"],"num_claims":18,"abstract":"An STTMRAM element includes a magnetic tunnel junction (MTJ) having a perpendicular magnetic orientation. The MTJ includes a barrier layer, a free layer formed on top of the barrier layer and having a magnetic orientation that is perpendicular and switchable relative to the magnetic orientation of the fixed layer. The magnetic orientation of the free layer switches when electrical current flows through the STTMRAM element. A switching-enhancing layer (SEL), separated from the free layer by a spacer layer, is formed on top of the free layer and has an in-plane magnetic orientation and generates magneto-static fields onto the free layer, causing the magnetic moments of the outer edges of the free layer to tilt with an in-plane component while minimally disturbing the magnetic moment at the center of the free layer to ease the switching of the free layer and to reduce the threshold voltage/current."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Perpendicular magnetic tunnel junction (pMTJ) with in-plane magneto-static switching-enhancing layer","description":"An STTMRAM element includes a magnetic tunnel junction (MTJ) having a perpendicular magnetic orientation. The MTJ includes a barrier layer, a free layer formed on top of the barrier layer and having a","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9679625","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9679625","citation_suggestion":"Patentable. \"Perpendicular magnetic tunnel junction (pMTJ) with in-plane magneto-static switching-enhancing layer\" (US-9679625). https://patentable.app/patents/US-9679625","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9679625","json":"https://patentable.app/api/llm-context/US-9679625","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T10:22:30.892Z"}