{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9679645","patent":{"patent_number":"US-9679645","title":"Non-volatile, piezoelectronic memory based on piezoresistive strain produced by piezoelectric remanence","assignee":null,"inventors":[],"filing_date":"2015-12-22T00:00:00.000Z","publication_date":"2017-06-13T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C"],"num_claims":11,"abstract":"A nonvolatile memory storage device includes a ferroelectric (FE) material coupled with a piezoresistive (PR) material through an inherent piezoelectric response of the FE material, wherein an electrical resistance of the PR material is dependent on a compressive stress applied thereto, the compressive stress caused by a remanent strain of the FE material resulting from a polarization of the FE material, such that a polarized state of the FE material results in a first resistance value of the PR material, and a depolarized state of the FE material results in a second resistance value of the PR material."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Non-volatile, piezoelectronic memory based on piezoresistive strain produced by piezoelectric remanence","description":"A nonvolatile memory storage device includes a ferroelectric (FE) material coupled with a piezoresistive (PR) material through an inherent piezoelectric response of the FE material, wherein an electri","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9679645","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9679645","citation_suggestion":"Patentable. \"Non-volatile, piezoelectronic memory based on piezoresistive strain produced by piezoelectric remanence\" (US-9679645). https://patentable.app/patents/US-9679645","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9679645","json":"https://patentable.app/api/llm-context/US-9679645","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T10:21:14.173Z"}