{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9679647","patent":{"patent_number":"US-9679647","title":"Semiconductor memory device including a resistance change element and a control circuit for changing resistance of the resistance change element","assignee":null,"inventors":[],"filing_date":"2016-04-15T00:00:00.000Z","publication_date":"2017-06-13T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C"],"num_claims":10,"abstract":"Included are memory cells each including a resistance change element and a control circuit. The circuit performs an On writing process for applying, to the memory cell, an On writing pulse for the cell to be in a resistance state where a resistance value of the resistance change element is lower than a first reference value and an Off writing process for applying an Off writing pulse with an opposite polarity to the On writing pulse for a high resistance state with a second reference value or greater. The circuit applies, in the On writing process, a trial pulse having the same polarity as that of the On writing pulse and having the pulse width shorter than that of the On writing pulse and a reset pulse having the same polarity as that of the On writing pulse, in this order before applying the On writing pulse to the cell."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor memory device including a resistance change element and a control circuit for changing resistance of the resistance change element","description":"Included are memory cells each including a resistance change element and a control circuit. The circuit performs an On writing process for applying, to the memory cell, an On writing pulse for the cel","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9679647","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9679647","citation_suggestion":"Patentable. \"Semiconductor memory device including a resistance change element and a control circuit for changing resistance of the resistance change element\" (US-9679647). https://patentable.app/patents/US-9679647","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9679647","json":"https://patentable.app/api/llm-context/US-9679647","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T09:50:22.798Z"}