{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9679763","patent":{"patent_number":"US-9679763","title":"Silicon-on-insulator fin field-effect transistor device formed on a bulk substrate","assignee":null,"inventors":[],"filing_date":"2015-11-20T00:00:00.000Z","publication_date":"2017-06-13T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":15,"abstract":"A method for manufacturing a semiconductor device comprises forming a first diffusion stop layer on a bulk semiconductor substrate, forming a doped semiconductor layer on the first diffusion stop layer, forming a second diffusion stop layer on the doped semiconductor layer, forming a fin layer on the doped semiconductor layer, patterning the first and second diffusion stop layers, the doped semiconductor layer, the fin layer and a portion of the bulk substrate, oxidizing the doped semiconductor layer to form an oxide layer, and forming a dielectric on the bulk substrate adjacent the patterned portion of the bulk substrate, the patterned first diffusion stop layer and the oxide layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Silicon-on-insulator fin field-effect transistor device formed on a bulk substrate","description":"A method for manufacturing a semiconductor device comprises forming a first diffusion stop layer on a bulk semiconductor substrate, forming a doped semiconductor layer on the first diffusion stop laye","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9679763","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9679763","citation_suggestion":"Patentable. \"Silicon-on-insulator fin field-effect transistor device formed on a bulk substrate\" (US-9679763). https://patentable.app/patents/US-9679763","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9679763","json":"https://patentable.app/api/llm-context/US-9679763","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T07:00:05.602Z"}