{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9679764","patent":{"patent_number":"US-9679764","title":"Semiconductor device structures comprising polycrystalline CVD diamond with improved near-substrate thermal conductivity","assignee":null,"inventors":[],"filing_date":"2016-11-21T00:00:00.000Z","publication_date":"2017-06-13T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":9,"abstract":"Disclosed is a semiconductor device structure including a III-V compound semiconductor material layer, a polycrystalline CVD diamond material layer, and an interface region, having a diamond nucleation layer, between the III-V compound semiconductor material layer and the polycrystalline CVD diamond material layer. A Raman signal generated from a region having the diamond nucleation layer exhibits an sp3 carbon peak at 1332 cm−1 having a full width half-maximum of no more than 5.0 cm−1. The Raman signal further exhibits one or both of the following characteristics: (i) an sp2 carbon peak at 1550 cm−1 having a height no more than 20% of a height of the sp3 carbon peak; and (ii) the sp3 carbon peak at 1332 cm−1 is no less than 10% of local background intensity. The diamond nucleation layer further includes an average nucleation density range of 1×108 cm−2 to 1×1012 cm−2."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device structures comprising polycrystalline CVD diamond with improved near-substrate thermal conductivity","description":"Disclosed is a semiconductor device structure including a III-V compound semiconductor material layer, a polycrystalline CVD diamond material layer, and an interface region, having a diamond nucleatio","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9679764","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9679764","citation_suggestion":"Patentable. \"Semiconductor device structures comprising polycrystalline CVD diamond with improved near-substrate thermal conductivity\" (US-9679764). https://patentable.app/patents/US-9679764","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9679764","json":"https://patentable.app/api/llm-context/US-9679764","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T07:19:57.496Z"}