{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9679768","patent":{"patent_number":"US-9679768","title":"Method for removing hydrogen from oxide semiconductor layer having insulating layer containing halogen element formed thereover","assignee":null,"inventors":[],"filing_date":"2014-11-24T00:00:00.000Z","publication_date":"2017-06-13T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"An object is to provide a semiconductor device with stable electric characteristics in which an oxide semiconductor is used. An impurity such as hydrogen or moisture (e.g., a hydrogen atom or a compound containing a hydrogen atom such as H2O) is eliminated from an oxide semiconductor layer with use of a halogen element typified by fluorine or chlorine, so that the impurity concentration in the oxide semiconductor layer is reduced. A gate insulating layer and/or an insulating layer provided in contact with the oxide semiconductor layer can be formed to contain a halogen element. In addition, a halogen element may be attached to the oxide semiconductor layer through plasma treatment under an atmosphere of a gas containing a halogen element."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for removing hydrogen from oxide semiconductor layer having insulating layer containing halogen element formed thereover","description":"An object is to provide a semiconductor device with stable electric characteristics in which an oxide semiconductor is used. An impurity such as hydrogen or moisture (e.g., a hydrogen atom or a compou","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9679768","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9679768","citation_suggestion":"Patentable. \"Method for removing hydrogen from oxide semiconductor layer having insulating layer containing halogen element formed thereover\" (US-9679768). https://patentable.app/patents/US-9679768","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9679768","json":"https://patentable.app/api/llm-context/US-9679768","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T07:22:39.246Z"}