{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9679771","patent":{"patent_number":"US-9679771","title":"Fabrication and design methods using selective etching and dual-material self-aligned multiple patterning processes to reduce the cut-hole patterning yield loss","assignee":null,"inventors":[],"filing_date":"2016-03-07T00:00:00.000Z","publication_date":"2017-06-13T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":37,"abstract":"Design and fabrication methods to reduce the effect of edge-placement errors in the cut-hole patterning process are invented using selective etching and dual-material self-aligned multiple patterning processes. The invented methods consist of a series of processing steps to decompose the original cut-hole mask into multiple separate masks, pattern the cut holes on the resist to expose certain targeted lines, and selectively etch the exposed targeted lines (formed by dual-material self-aligned multiple patterning processes) without attacking the non-target lines. This invention provides production-worthy methods for the semiconductor industry to continue IC scaling down to sub-10 nm half pitch."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Fabrication and design methods using selective etching and dual-material self-aligned multiple patterning processes to reduce the cut-hole patterning yield loss","description":"Design and fabrication methods to reduce the effect of edge-placement errors in the cut-hole patterning process are invented using selective etching and dual-material self-aligned multiple patterning ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9679771","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9679771","citation_suggestion":"Patentable. \"Fabrication and design methods using selective etching and dual-material self-aligned multiple patterning processes to reduce the cut-hole patterning yield loss\" (US-9679771). https://patentable.app/patents/US-9679771","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9679771","json":"https://patentable.app/api/llm-context/US-9679771","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T09:50:39.273Z"}