{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9679779","patent":{"patent_number":"US-9679779","title":"Systems and methods for depositing materials on either side of a freestanding film using selective thermally-assisted chemical vapor deposition (STA-CVD), and structures formed using same","assignee":null,"inventors":[],"filing_date":"2013-03-12T00:00:00.000Z","publication_date":"2017-06-13T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":25,"abstract":"Embodiments of the present invention provide systems and methods for depositing materials on either side of a freestanding film using selectively thermally-assisted chemical vapor deposition (STA-CVD), and structures formed using same. A freestanding film, which is suspended over a cavity defined in a substrate, is exposed to a fluidic CVD precursor that reacts to form a solid material when exposed to heat. The freestanding film is then selectively heated in the presence of the precursor. The CVD precursor preferentially deposits on the surface(s) of the freestanding film."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Systems and methods for depositing materials on either side of a freestanding film using selective thermally-assisted chemical vapor deposition (STA-CVD), and structures formed using same","description":"Embodiments of the present invention provide systems and methods for depositing materials on either side of a freestanding film using selectively thermally-assisted chemical vapor deposition (STA-CVD)","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9679779","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9679779","citation_suggestion":"Patentable. \"Systems and methods for depositing materials on either side of a freestanding film using selective thermally-assisted chemical vapor deposition (STA-CVD), and structures formed using same\" (US-9679779). https://patentable.app/patents/US-9679779","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9679779","json":"https://patentable.app/api/llm-context/US-9679779","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T15:31:50.718Z"}