{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9679802","patent":{"patent_number":"US-9679802","title":"Method of etching a porous dielectric material","assignee":null,"inventors":[],"filing_date":"2015-03-18T00:00:00.000Z","publication_date":"2017-06-13T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":19,"abstract":"A method for producing interconnection lines including etching a layer of porous dielectric material forming a trench and filling the trench is provided. The etching is carried out in a plasma so as to grow, all along the etching, a protective layer on flanks of the layer of porous dielectric material. The plasma is formed from a gas formed from a first component and a second component, or a gas formed from a first component, a second component and a third component. The first component is a hydrocarbon of the CXHY type, where X is the proportion of carbon in the gas and Y the proportion of hydrogen in the gas; the second component is taken from nitrogen or dioxygen or a mixture of nitrogen and dioxygen; the third component is taken from argon or helium; and the protective layer is based on hydrocarbon."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of etching a porous dielectric material","description":"A method for producing interconnection lines including etching a layer of porous dielectric material forming a trench and filling the trench is provided. The etching is carried out in a plasma so as t","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9679802","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9679802","citation_suggestion":"Patentable. \"Method of etching a porous dielectric material\" (US-9679802). https://patentable.app/patents/US-9679802","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9679802","json":"https://patentable.app/api/llm-context/US-9679802","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T07:15:00.173Z"}