{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9679822","patent":{"patent_number":"US-9679822","title":"Method for monitoring epitaxial growth geometry shift","assignee":null,"inventors":[],"filing_date":"2016-02-22T00:00:00.000Z","publication_date":"2017-06-13T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":19,"abstract":"A method of monitoring an epitaxial growth geometry shift is disclosed. First, second and third trenches are formed on a semiconductor wafer. An epitaxial layer is grown. The epitaxial layer covers the first trenches and the second trenches but not the third trenches. First and second recesses on a top surface of the epitaxial layer are formed. First and second openings aligned with the first and the second recesses and a third openings aligned with the third trenches are formed in a photoresist layer. A corresponding first offset between a top center and a bottom center of each first recess is measured. An offset value of the top center from the bottom center of said each first recess is determined. A corresponding second offset between a top center of each second recess and a center of corresponding second opening is determined. A corresponding third offset between a center of each third trench and a center of corresponding third opening is measured. A corresponding offset value of each second recess from the difference between corresponding second offset and corresponding third offset is determined."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for monitoring epitaxial growth geometry shift","description":"A method of monitoring an epitaxial growth geometry shift is disclosed. First, second and third trenches are formed on a semiconductor wafer. An epitaxial layer is grown. The epitaxial layer covers th","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9679822","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9679822","citation_suggestion":"Patentable. \"Method for monitoring epitaxial growth geometry shift\" (US-9679822). https://patentable.app/patents/US-9679822","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9679822","json":"https://patentable.app/api/llm-context/US-9679822","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T11:20:58.471Z"}