{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9679858","patent":{"patent_number":"US-9679858","title":"Semiconductor device and method of manufacturing same","assignee":null,"inventors":[],"filing_date":"2016-08-09T00:00:00.000Z","publication_date":"2017-06-13T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":18,"abstract":"To provide a semiconductor device having improved reliability. The semiconductor device is equipped with a first polyimide film, rewirings formed over the first polyimide film, first and second dummy patterns formed over the first polyimide film, a second polyimide film that covers the rewirings and the dummy patterns, and an opening portion that exposes a portion of the rewirings in the second polyimide film. The first dummy pattern is, in plan view, comprised of a closed pattern surrounding the rewirings while having a space therebetween."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device and method of manufacturing same","description":"To provide a semiconductor device having improved reliability. The semiconductor device is equipped with a first polyimide film, rewirings formed over the first polyimide film, first and second dummy ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9679858","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9679858","citation_suggestion":"Patentable. \"Semiconductor device and method of manufacturing same\" (US-9679858). https://patentable.app/patents/US-9679858","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9679858","json":"https://patentable.app/api/llm-context/US-9679858","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T06:25:06.710Z"}