{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9679859","patent":{"patent_number":"US-9679859","title":"Interconnect structure and method of forming same","assignee":null,"inventors":[],"filing_date":"2016-01-08T00:00:00.000Z","publication_date":"2017-06-13T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":19,"abstract":"An apparatus comprises a dielectric layer formed on a first side of a substrate, a first side interconnect structure comprising a first metal line and a pad formed in the dielectric layer, wherein the pad comprises a bottom portion formed of a first conductive metal and an upper portion formed of a second conductive metal, and wherein sidewalls of the upper portion are surrounded by the bottom portion and a top surface of the pad is coplanar with a top surface of the first metal line and a passivation layer formed over the dielectric layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Interconnect structure and method of forming same","description":"An apparatus comprises a dielectric layer formed on a first side of a substrate, a first side interconnect structure comprising a first metal line and a pad formed in the dielectric layer, wherein the","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9679859","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9679859","citation_suggestion":"Patentable. \"Interconnect structure and method of forming same\" (US-9679859). https://patentable.app/patents/US-9679859","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9679859","json":"https://patentable.app/api/llm-context/US-9679859","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T11:22:39.418Z"}