{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9679966","patent":{"patent_number":"US-9679966","title":"Electronic device containing nanowire(s), equipped with a transition metal buffer layer, process for growing at least one nanowire, and process for manufacturing a device","assignee":null,"inventors":[],"filing_date":"2013-10-28T00:00:00.000Z","publication_date":"2017-06-13T00:00:00.000Z","cpc_codes":["B82Y","B82Y","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","B82Y"],"num_claims":25,"abstract":"The electronic device comprises a substrate (1), at least one semiconductor nanowire (2) and a buffer layer (3) interposed between the substrate (1) and said nanowire (2). The buffer layer (3) is at least partly formed by a transition metal nitride layer (9) from which extends the nanowire (2), said transition metal nitride being chosen from: vanadium nitride, chromium nitride, zirconium nitride, niobium nitride, molybdenum nitride, hafnium nitride or tantalum nitride."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Electronic device containing nanowire(s), equipped with a transition metal buffer layer, process for growing at least one nanowire, and process for manufacturing a device","description":"The electronic device comprises a substrate (1), at least one semiconductor nanowire (2) and a buffer layer (3) interposed between the substrate (1) and said nanowire (2). The buffer layer (3) is at l","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9679966","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9679966","citation_suggestion":"Patentable. \"Electronic device containing nanowire(s), equipped with a transition metal buffer layer, process for growing at least one nanowire, and process for manufacturing a device\" (US-9679966). https://patentable.app/patents/US-9679966","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9679966","json":"https://patentable.app/api/llm-context/US-9679966","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T05:20:36.482Z"}