{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9679967","patent":{"patent_number":"US-9679967","title":"Contact resistance reduction by III-V Ga deficient surface","assignee":null,"inventors":[],"filing_date":"2016-09-30T00:00:00.000Z","publication_date":"2017-06-13T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":19,"abstract":"A method for forming a semiconductor device includes forming a III-V semiconductor substrate and forming a gate structure on the III-V semiconductor substrate. The method also includes forming a thin spacer surrounding the gate structure and forming a source/drain junction with a first doped III-V material at an upper surface of the III-V semiconductor substrate. The method also includes oxidizing a surface the source/drain forming an oxidation layer; removing natural oxides from the oxidation layer on a surface of the source/drain to expose ions of the first doped material at least at a surface of the source/drain. The method further includes applying a second doping to the source/drain to increase a doping concentration of the first doped III-V material, forming metal contacts at least at the second doped surface of the source/drain; and then annealing the contact."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Contact resistance reduction by III-V Ga deficient surface","description":"A method for forming a semiconductor device includes forming a III-V semiconductor substrate and forming a gate structure on the III-V semiconductor substrate. The method also includes forming a thin ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9679967","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9679967","citation_suggestion":"Patentable. \"Contact resistance reduction by III-V Ga deficient surface\" (US-9679967). https://patentable.app/patents/US-9679967","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9679967","json":"https://patentable.app/api/llm-context/US-9679967","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T11:45:44.844Z"}