{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9679980","patent":{"patent_number":"US-9679980","title":"Common source oxide formation by in-situ steam oxidation for embedded flash","assignee":null,"inventors":[],"filing_date":"2014-03-13T00:00:00.000Z","publication_date":"2017-06-13T00:00:00.000Z","cpc_codes":["G11C"],"num_claims":20,"abstract":"The present disclosure relates to an embedded flash memory cell having a common source oxide layer with a substantially flat top surface, disposed between a common source region and a common erase gate, and a method of formation. In some embodiments, the embedded flash memory cell has a semiconductor substrate with a common source region separated from a first drain region by a first channel region and separated from a second drain region by a second channel region. A high-quality common source oxide layer is formed by an in-situ steam generation (ISSG) process at a location overlying the common source region. First and second floating gate are disposed over the first and second channel regions on opposing sides of a common erase gate having a substantially flat bottom surface abutting a substantially flat top surface of the common source oxide layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Common source oxide formation by in-situ steam oxidation for embedded flash","description":"The present disclosure relates to an embedded flash memory cell having a common source oxide layer with a substantially flat top surface, disposed between a common source region and a common erase gat","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9679980","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9679980","citation_suggestion":"Patentable. \"Common source oxide formation by in-situ steam oxidation for embedded flash\" (US-9679980). https://patentable.app/patents/US-9679980","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9679980","json":"https://patentable.app/api/llm-context/US-9679980","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T11:19:34.759Z"}