{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9679983","patent":{"patent_number":"US-9679983","title":"Semiconductor devices including threshold voltage control regions","assignee":null,"inventors":[],"filing_date":"2015-02-04T00:00:00.000Z","publication_date":"2017-06-13T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":10,"abstract":"A semiconductor device includes a semiconductor substrate including isolation regions defining first and second active regions having a first and second conductivity type, respectively, first threshold voltage control regions in predetermined regions of the first active region, wherein the first threshold voltage control regions have the first conductivity type and a different impurity concentration from the first active region, a first gate trench extending across the first active region, wherein portions of side bottom portions of the first gate trench adjacent to the respective isolation region are disposed at a higher level than a central bottom portion of the first gate trench, and the first threshold voltage control regions remain in the first active region under the side bottom portions of the first gate trench adjacent to the respective isolation region, and a first gate pattern. Methods of manufacturing such semiconductor devices are also provided."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor devices including threshold voltage control regions","description":"A semiconductor device includes a semiconductor substrate including isolation regions defining first and second active regions having a first and second conductivity type, respectively, first threshol","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9679983","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9679983","citation_suggestion":"Patentable. \"Semiconductor devices including threshold voltage control regions\" (US-9679983). https://patentable.app/patents/US-9679983","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9679983","json":"https://patentable.app/api/llm-context/US-9679983","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T03:53:35.649Z"}