{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9679997","patent":{"patent_number":"US-9679997","title":"Semiconductor device with suppressed two-step on phenomenon","assignee":null,"inventors":[],"filing_date":"2016-05-18T00:00:00.000Z","publication_date":"2017-06-13T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":3,"abstract":"A semiconductor device includes an IGBT region with a bottom-body region on a front surface side of an IGBT drift region, an IGBT barrier region on a front surface side of the bottom-body region, and a top-body region on a front surface side of the IGBT barrier region. A diode region is include with a bottom-anode region on a front surface side of the diode drift region, a diode barrier region on a front surface side of the bottom-anode region, a top-anode region on a front surface side of the diode barrier region, and a pillar region extending from the front surface of the semiconductor substrate, piercing the top-anode region, and reaching the diode barrier region, and connected to the front surface electrode and the diode barrier region. An impurity concentration of the top-body region is lower than an impurity concentration of the bottom-anode region."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device with suppressed two-step on phenomenon","description":"A semiconductor device includes an IGBT region with a bottom-body region on a front surface side of an IGBT drift region, an IGBT barrier region on a front surface side of the bottom-body region, and ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9679997","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9679997","citation_suggestion":"Patentable. \"Semiconductor device with suppressed two-step on phenomenon\" (US-9679997). https://patentable.app/patents/US-9679997","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9679997","json":"https://patentable.app/api/llm-context/US-9679997","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T10:17:22.214Z"}