{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9680010","patent":{"patent_number":"US-9680010","title":"High voltage device and method of fabricating the same","assignee":null,"inventors":[],"filing_date":"2016-02-04T00:00:00.000Z","publication_date":"2017-06-13T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":8,"abstract":"A high voltage device includes a substrate, a first LDMOS transistor and a second LDMOS transistor disposed on the substrate. The first LDMOS transistor includes a first gate electrode disposed on the substrate. A first STI is embedded in the substrate and disposed at an edge of the first gate electrode and two first doping regions respectively disposed at one side of the first STI and one side of the first gate electrode. The second LDMOS transistor includes a second gate electrode disposed on the substrate. A second STI is embedded in the substrate and disposed at an edge of the second gate electrode. Two second doping regions are respectively disposed at one side of the second STI and one side of the second gate electrode, wherein the second STI is deeper than the first STI."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"High voltage device and method of fabricating the same","description":"A high voltage device includes a substrate, a first LDMOS transistor and a second LDMOS transistor disposed on the substrate. The first LDMOS transistor includes a first gate electrode disposed on the","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9680010","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9680010","citation_suggestion":"Patentable. \"High voltage device and method of fabricating the same\" (US-9680010). https://patentable.app/patents/US-9680010","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9680010","json":"https://patentable.app/api/llm-context/US-9680010","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T10:33:05.510Z"}