{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9680014","patent":{"patent_number":"US-9680014","title":"Semiconductor device including Fin structures and manufacturing method thereof","assignee":null,"inventors":[],"filing_date":"2015-04-17T00:00:00.000Z","publication_date":"2017-06-13T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":17,"abstract":"A p-type semiconductor Fin FET device includes a fin structure disposed over a substrate. The fin structure includes a channel layer. The Fin FET device also includes a gate structure including a gate electrode layer and a gate dielectric layer, covering a portion of the fin structure. Side-wall insulating layers are disposed over both main sides of the gate electrode layer. The Fin FET device includes a source and a drain, each including a stressor layer disposed in a recess formed by removing the fin structure not covered by the gate structure. The stressor layer includes a first stressor layer and a second stressor layer formed in this order. In the source, an interface between the first stressor layer and the channel layer is located under one of the side-wall insulating layers closer to the source or the gate electrode."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device including Fin structures and manufacturing method thereof","description":"A p-type semiconductor Fin FET device includes a fin structure disposed over a substrate. The fin structure includes a channel layer. The Fin FET device also includes a gate structure including a gate","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9680014","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9680014","citation_suggestion":"Patentable. \"Semiconductor device including Fin structures and manufacturing method thereof\" (US-9680014). https://patentable.app/patents/US-9680014","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9680014","json":"https://patentable.app/api/llm-context/US-9680014","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T09:24:20.412Z"}