{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9680031","patent":{"patent_number":"US-9680031","title":"Semiconductor device and manufacturing method thereof","assignee":null,"inventors":[],"filing_date":"2016-02-24T00:00:00.000Z","publication_date":"2017-06-13T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":6,"abstract":"Provided is an in-wiring-layer active element (component) which allows for electrical isolation between a gate electrode and a channel in a top gate structure. A semiconductor device includes a first wiring layer, a second wiring layer, and a semiconductor element. The first wiring layer has a first interlayer insulating layer, and a first wire embedded in the first interlayer insulating layer. The second wiring layer has a second interlayer insulating layer, and second wires embedded in the second interlayer insulating layer. The semiconductor element is provided at least in the second wiring layer. The semiconductor element includes a semiconductor layer provided in the second wiring layer, a gate insulating film provided in contact with the semiconductor layer, a gate electrode provided on the opposite side of the semiconductor layer via the first gate insulating film, and a first side wall film provided over a side surface of the semiconductor layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device and manufacturing method thereof","description":"Provided is an in-wiring-layer active element (component) which allows for electrical isolation between a gate electrode and a channel in a top gate structure. A semiconductor device includes a first ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9680031","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9680031","citation_suggestion":"Patentable. \"Semiconductor device and manufacturing method thereof\" (US-9680031). https://patentable.app/patents/US-9680031","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9680031","json":"https://patentable.app/api/llm-context/US-9680031","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T05:36:37.624Z"}