{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9680034","patent":{"patent_number":"US-9680034","title":"Manufacturing method for semiconductor device with point defect region doped with transition metal","assignee":null,"inventors":[],"filing_date":"2016-03-30T00:00:00.000Z","publication_date":"2017-06-13T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":14,"abstract":"A simplified manufacturing process stably produces a semiconductor device with high electrical characteristics, wherein platinum acts as an acceptor. Plasma treatment damages the surface of an oxide film formed on a n− type drift layer deposited on an n+ type semiconductor substrate. The oxide film is patterned to have tapered ends. Two proton irradiations are carried out on the n− type drift layer with the oxide film as a mask to form a point defect region in the vicinity of the surface of the n− type drift layer. Silica paste containing 1% by weight platinum is applied to an exposed region of the n− type drift layer surface not covered with the oxide film. Heat treatment inverts the vicinity of the surface of the n− type drift layer to p-type by platinum atoms which are acceptors. A p-type inversion enhancement region forms a p-type anode region."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Manufacturing method for semiconductor device with point defect region doped with transition metal","description":"A simplified manufacturing process stably produces a semiconductor device with high electrical characteristics, wherein platinum acts as an acceptor. Plasma treatment damages the surface of an oxide f","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9680034","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9680034","citation_suggestion":"Patentable. \"Manufacturing method for semiconductor device with point defect region doped with transition metal\" (US-9680034). https://patentable.app/patents/US-9680034","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9680034","json":"https://patentable.app/api/llm-context/US-9680034","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T05:17:00.895Z"}