{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9680058","patent":{"patent_number":"US-9680058","title":"Group-III nitride structure including a fine wall-shaped structure containing a group-III nitridesemiconductor crystal and method for producing a group-III nitride structure including a fine wall-shaped structure containing a group-III nitride semiconductor crystal","assignee":null,"inventors":[],"filing_date":"2008-11-26T00:00:00.000Z","publication_date":"2017-06-13T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":5,"abstract":"A group-III nitride structure includes a substrate 102 and a fine wall-shaped structure 110 disposed to stand on the substrate 102 in a vertical direction relative to a surface of the substrate 102 and extending in an in-plane direction of the substrate 102. The fine wall-shaped structure 110 contains a group-III nitride semiconductor crystal, and h is larger than d assuming that the height of the fine wall-shaped structure 110 is h and the width of the fine wall-shaped structure 110 in a direction perpendicular to the height direction and the extending direction is d."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Group-III nitride structure including a fine wall-shaped structure containing a group-III nitridesemiconductor crystal and method for producing a group-III nitride structure including a fine wall-shaped structure containing a group-III nitride semiconductor crystal","description":"A group-III nitride structure includes a substrate 102 and a fine wall-shaped structure 110 disposed to stand on the substrate 102 in a vertical direction relative to a surface of the substrate 102 an","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9680058","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9680058","citation_suggestion":"Patentable. \"Group-III nitride structure including a fine wall-shaped structure containing a group-III nitridesemiconductor crystal and method for producing a group-III nitride structure including a fine wall-shaped structure containing a group-III nitride semiconductor crystal\" (US-9680058). https://patentable.app/patents/US-9680058","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9680058","json":"https://patentable.app/api/llm-context/US-9680058","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T07:17:28.857Z"}