{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9685222","patent":{"patent_number":"US-9685222","title":"Memory cell with read transistors of the TFET and MOSFET type to reduce leakage current","assignee":null,"inventors":[],"filing_date":"2015-10-14T00:00:00.000Z","publication_date":"2017-06-20T00:00:00.000Z","cpc_codes":["G11C","G11C"],"num_claims":10,"abstract":"Memory cell of the SRAM type, including storage transistors forming a memory point for storing a bit and a read port having at least one MOS transistor, a TFET transistor, a power terminal and a read bit line whereof a potential is designed to vary depending on the value of the stored bit, and such that:"},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Memory cell with read transistors of the TFET and MOSFET type to reduce leakage current","description":"Memory cell of the SRAM type, including storage transistors forming a memory point for storing a bit and a read port having at least one MOS transistor, a TFET transistor, a power terminal and a read ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9685222","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9685222","citation_suggestion":"Patentable. \"Memory cell with read transistors of the TFET and MOSFET type to reduce leakage current\" (US-9685222). https://patentable.app/patents/US-9685222","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9685222","json":"https://patentable.app/api/llm-context/US-9685222","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T03:54:47.159Z"}