{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9685318","patent":{"patent_number":"US-9685318","title":"Method of forming semiconductor device","assignee":null,"inventors":[],"filing_date":"2015-10-23T00:00:00.000Z","publication_date":"2017-06-20T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":17,"abstract":"Provided is a method of forming a semiconductor device. The method can include loading a semiconductor substrate into semiconductor equipment. A base layer can be formed on the loaded semiconductor substrate by performing a base deposition process using a base source material. A first silicon layer can be formed on the base layer to a greater thickness than the base layer by performing a first silicon deposition process using a silicon source material different from the base source material. A first nitrided silicon layer can be formed by nitriding the first silicon layer using a first nitridation process. The semiconductor substrate having the first nitrided silicon layer can be unloaded from the semiconductor equipment."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of forming semiconductor device","description":"Provided is a method of forming a semiconductor device. The method can include loading a semiconductor substrate into semiconductor equipment. A base layer can be formed on the loaded semiconductor su","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9685318","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9685318","citation_suggestion":"Patentable. \"Method of forming semiconductor device\" (US-9685318). https://patentable.app/patents/US-9685318","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9685318","json":"https://patentable.app/api/llm-context/US-9685318","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T06:39:20.308Z"}