{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9685327","patent":{"patent_number":"US-9685327","title":"Electronic device using group III nitride semiconductor and its fabrication method and an epitaxial multi-layer wafer for making it","assignee":null,"inventors":[],"filing_date":"2014-08-14T00:00:00.000Z","publication_date":"2017-06-20T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":18,"abstract":"The present invention discloses an electronic device using a group III nitride substrate fabricated via the ammonothermal method. By utilizing the high-electron concentration of ammonothermally grown substrates having the dislocation density less than 105 cm−2, combined with a high-purity active layer of Ga1-x-yAlxInyN (0≦x≦1, 0≦y≦1) grown by a vapor phase method, the device can attain high level of breakdown voltage as well as low on-resistance. To realize a good matching between the ammonothermally grown substrate and the high-purity active layer, a transition layer is optionally introduced. The active layer is thicker than a depletion region created by a device structure in the active layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Electronic device using group III nitride semiconductor and its fabrication method and an epitaxial multi-layer wafer for making it","description":"The present invention discloses an electronic device using a group III nitride substrate fabricated via the ammonothermal method. By utilizing the high-electron concentration of ammonothermally grown ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9685327","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9685327","citation_suggestion":"Patentable. \"Electronic device using group III nitride semiconductor and its fabrication method and an epitaxial multi-layer wafer for making it\" (US-9685327). https://patentable.app/patents/US-9685327","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9685327","json":"https://patentable.app/api/llm-context/US-9685327","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T06:00:28.066Z"}