{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9685334","patent":{"patent_number":"US-9685334","title":"Methods of forming semiconductor fin with carbon dopant for diffusion control","assignee":null,"inventors":[],"filing_date":"2016-04-21T00:00:00.000Z","publication_date":"2017-06-20T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":19,"abstract":"Methods of forming a semiconductor fin and methods for controlling dopant diffusion to a semiconductor fin are disclosed herein. The methods provide alternative ways to incorporate a carbon dopant into the fin to later control out-diffusion of dopants from a dopant-including epitaxial layer. One method includes depositing a carbon-containing layer over a portion of the fin adjacent to the gate and annealing to diffuse carbon from the carbon-containing layer into at least the portion of the semiconductor fin. This method can be applied to SOI or bulk semiconductor substrates. Another method includes epitaxially growing a carbon dopant containing semiconductor layer for later use in forming the fin."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Methods of forming semiconductor fin with carbon dopant for diffusion control","description":"Methods of forming a semiconductor fin and methods for controlling dopant diffusion to a semiconductor fin are disclosed herein. The methods provide alternative ways to incorporate a carbon dopant int","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9685334","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9685334","citation_suggestion":"Patentable. \"Methods of forming semiconductor fin with carbon dopant for diffusion control\" (US-9685334). https://patentable.app/patents/US-9685334","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9685334","json":"https://patentable.app/api/llm-context/US-9685334","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T08:18:22.648Z"}