{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9685340","patent":{"patent_number":"US-9685340","title":"Stable contact on one-sided gate tie-down structure","assignee":null,"inventors":[],"filing_date":"2015-06-29T00:00:00.000Z","publication_date":"2017-06-20T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":17,"abstract":"After forming a first contact opening to expose a portion of a first source/drain contact located at one side of a functional gate structure followed by forming a second contact opening that intersects the first contact opening to expose the functional gate structure and a portion of a second source/drain contact located at an opposite side of the functional gate structure, the exposed portions of the first source/drain contact and the second-side source/drain contact are recessed. A dielectric cap is subsequently formed over the recessed portion of the second source/drain contact. A shared contact is formed in the first contact opening and the second contact opening to electrically connect a gate conductor of the functional gate structure to the first source/drain contact. The dielectric cap isolates the second source/drain contact from the shared contact, thus preventing contact shorts in a one-sided gate tie-down structure for 7 nm node and beyond."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Stable contact on one-sided gate tie-down structure","description":"After forming a first contact opening to expose a portion of a first source/drain contact located at one side of a functional gate structure followed by forming a second contact opening that intersect","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9685340","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9685340","citation_suggestion":"Patentable. \"Stable contact on one-sided gate tie-down structure\" (US-9685340). https://patentable.app/patents/US-9685340","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9685340","json":"https://patentable.app/api/llm-context/US-9685340","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T09:28:54.194Z"}