{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9685344","patent":{"patent_number":"US-9685344","title":"Method of fabricating a semiconductor device including a plurality of isolation features","assignee":null,"inventors":[],"filing_date":"2015-11-10T00:00:00.000Z","publication_date":"2017-06-20T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":20,"abstract":"A method of fabricating a semiconductor device includes etching a substrate to form a plurality of first trenches and a plurality of second trenches performed at an electrostatic chuck (ESC) temperature between about 90° C. to 120° C. in the substrate, wherein each trench of the plurality of first trenches extends downward from the substrate major surface to a first height, and each trench of the plurality of second trenches extends downward from the substrate major surface to a second height greater than the first height. The method includes forming a first isolation structure in each of the plurality of first trenches. The method includes forming a second isolation structure in each of the plurality of second trenches, wherein a difference between a height of the first isolation structure and the first height equals a difference between a height of the second isolation structure and the second height."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of fabricating a semiconductor device including a plurality of isolation features","description":"A method of fabricating a semiconductor device includes etching a substrate to form a plurality of first trenches and a plurality of second trenches performed at an electrostatic chuck (ESC) temperatu","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9685344","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9685344","citation_suggestion":"Patentable. \"Method of fabricating a semiconductor device including a plurality of isolation features\" (US-9685344). https://patentable.app/patents/US-9685344","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9685344","json":"https://patentable.app/api/llm-context/US-9685344","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T04:57:22.893Z"}