{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9685369","patent":{"patent_number":"US-9685369","title":"Contact etch stop layers of a field effect transistor","assignee":null,"inventors":[],"filing_date":"2016-03-24T00:00:00.000Z","publication_date":"2017-06-20T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":25,"abstract":"A representative method for fabricating a field effect transistor comprises forming a source region and a drain region disposed in a substrate; forming a gate structure over the substrate, the gate structure comprising sidewalls and a top surface, the gate structure interposing the source region and the drain region; forming a contact etch stop layer (CESL) over at least a portion of the top surface of the gate structure; forming an interlayer dielectric layer over the CESL; forming a gate contact extending through the interlayer dielectric layer; and forming a source contact and a drain contact extending through the interlayer dielectric layer, wherein a first distance between an edge of the source contact and a first corresponding edge of the CESL is about 1 nm to about 10 nm."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Contact etch stop layers of a field effect transistor","description":"A representative method for fabricating a field effect transistor comprises forming a source region and a drain region disposed in a substrate; forming a gate structure over the substrate, the gate st","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9685369","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9685369","citation_suggestion":"Patentable. \"Contact etch stop layers of a field effect transistor\" (US-9685369). https://patentable.app/patents/US-9685369","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9685369","json":"https://patentable.app/api/llm-context/US-9685369","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T08:21:30.070Z"}