{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9685384","patent":{"patent_number":"US-9685384","title":"Devices and methods of forming epi for aggressive gate pitch","assignee":null,"inventors":[],"filing_date":"2016-07-14T00:00:00.000Z","publication_date":"2017-06-20T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":13,"abstract":"Devices and methods of fabricating integrated circuit devices for forming epi for aggressive gate pitch are provided. One method includes: obtaining an intermediate semiconductor device having a substrate, a fin structure, a plurality of stacks; etching the spacer between the plurality of stacks; growing, epitaxially, undoped silicon on a top surface of the fin structure between the plurality of stacks; depositing a liner over the undoped silicon and the plurality of stacks; etching to remove the liner and narrow the spacers, wherein the etching forms a wider portion of the spacer at the base of the stacks; etching between the plurality of stacks to remove the undoped silicon and form recesses in the fin structure; and growing, epitaxially, doped silicon between the plurality of stacks and in the fin structure. Also disclosed is an intermediate device formed by the method."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Devices and methods of forming epi for aggressive gate pitch","description":"Devices and methods of fabricating integrated circuit devices for forming epi for aggressive gate pitch are provided. One method includes: obtaining an intermediate semiconductor device having a subst","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9685384","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9685384","citation_suggestion":"Patentable. \"Devices and methods of forming epi for aggressive gate pitch\" (US-9685384). https://patentable.app/patents/US-9685384","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9685384","json":"https://patentable.app/api/llm-context/US-9685384","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T08:59:42.017Z"}