{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9685385","patent":{"patent_number":"US-9685385","title":"Method of fabricating semiconductor device","assignee":null,"inventors":[],"filing_date":"2016-08-03T00:00:00.000Z","publication_date":"2017-06-20T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":18,"abstract":"The present invention provides a method for forming a semiconductor device, including the following steps: first, a substrate is provided, at least one gate is formed on the substrate, a contact etching stop layer (CESL) and a first dielectric layer are formed on the substrate in sequence, afterwards, a first etching process is performed to remove the first dielectric layer, and to expose a top surface and at least one sidewall of the etching stop layer, next, a second etching process is performed to partially remove the contact etching stop layer, and to form at least one epitaxial recess in the substrate. Afterwards, an epitaxial process is performed, to form an epitaxial layer in the epitaxial recess, and a contact structure is then formed on the epitaxial layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of fabricating semiconductor device","description":"The present invention provides a method for forming a semiconductor device, including the following steps: first, a substrate is provided, at least one gate is formed on the substrate, a contact etchi","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9685385","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9685385","citation_suggestion":"Patentable. \"Method of fabricating semiconductor device\" (US-9685385). https://patentable.app/patents/US-9685385","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9685385","json":"https://patentable.app/api/llm-context/US-9685385","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T06:57:37.434Z"}