{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9685434","patent":{"patent_number":"US-9685434","title":"Inter-level dielectric layer in replacement metal gates and resistor fabrication","assignee":null,"inventors":[],"filing_date":"2014-12-10T00:00:00.000Z","publication_date":"2017-06-20T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":19,"abstract":"Embodiments in accordance with the present invention include a method of fabricating a semiconductor device including forming a first dummy gate in an active area on a first portion of a semiconductor device, wherein the first dummy gate includes undoped amorphous silicon. A second dummy gate and a third dummy gate are formed on a second portion of the semiconductor device, wherein the second dummy gate and the third dummy gate include undoped amorphous silicon. A filling material is deposited on the semiconductor device, where the filling material is doped amorphous silicon, and a chemical-mechanical polishing process is performed on the filling material."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Inter-level dielectric layer in replacement metal gates and resistor fabrication","description":"Embodiments in accordance with the present invention include a method of fabricating a semiconductor device including forming a first dummy gate in an active area on a first portion of a semiconductor","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9685434","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9685434","citation_suggestion":"Patentable. \"Inter-level dielectric layer in replacement metal gates and resistor fabrication\" (US-9685434). https://patentable.app/patents/US-9685434","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9685434","json":"https://patentable.app/api/llm-context/US-9685434","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T09:35:24.788Z"}