{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9685435","patent":{"patent_number":"US-9685435","title":"Integrated snubber in a single poly MOSFET","assignee":null,"inventors":[],"filing_date":"2016-01-04T00:00:00.000Z","publication_date":"2017-06-20T00:00:00.000Z","cpc_codes":["H02M","H02M"],"num_claims":17,"abstract":"Aspects of the present disclosure describe MOSFET devices that have snubber circuits. The snubber circuits comprise one or more resistors with a dynamically controllable resistance that is controlled by changes to a gate and/or drain potentials of the one or more MOSFET structures during switching events."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Integrated snubber in a single poly MOSFET","description":"Aspects of the present disclosure describe MOSFET devices that have snubber circuits. The snubber circuits comprise one or more resistors with a dynamically controllable resistance that is controlled ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9685435","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9685435","citation_suggestion":"Patentable. \"Integrated snubber in a single poly MOSFET\" (US-9685435). https://patentable.app/patents/US-9685435","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9685435","json":"https://patentable.app/api/llm-context/US-9685435","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T08:02:26.771Z"}