{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9685440","patent":{"patent_number":"US-9685440","title":"Forming fins utilizing alternating pattern of spacers","assignee":null,"inventors":[],"filing_date":"2016-06-29T00:00:00.000Z","publication_date":"2017-06-20T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":14,"abstract":"A method of forming a semiconductor structure includes forming a first pattern of alternating spacers of a first material and a second material on a semiconductor substrate, forming a second pattern of the alternating spacers of the first material and the second material by selectively removing at least a portion of at least one of one or more of the spacers of the first material and one or more of the spacers of the second material to form a remaining pattern of spacers of the first material and the second material on the semiconductor substrate, and transferring the second pattern of the spacers of the first material and the second material to the semiconductor substrate to form two or more fins in the semiconductor substrate by etching the semiconductor substrate selective to the first material and the second material."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Forming fins utilizing alternating pattern of spacers","description":"A method of forming a semiconductor structure includes forming a first pattern of alternating spacers of a first material and a second material on a semiconductor substrate, forming a second pattern o","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9685440","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9685440","citation_suggestion":"Patentable. \"Forming fins utilizing alternating pattern of spacers\" (US-9685440). https://patentable.app/patents/US-9685440","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9685440","json":"https://patentable.app/api/llm-context/US-9685440","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T10:17:14.924Z"}