{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9685446","patent":{"patent_number":"US-9685446","title":"Method of manufacturing a semiconductor device","assignee":null,"inventors":[],"filing_date":"2016-05-06T00:00:00.000Z","publication_date":"2017-06-20T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":13,"abstract":"A method of manufacturing a semiconductor device includes preparing a light ion source, a first mask and a second mask. A side of a first region on a top surface of a semiconductor substrate is shielded by using the first mask. The top surface, with the side of the first region thereon being shielded with the first mask, is irradiated with light ions by operating the light ion source to introduce lattice defects at a specified depth on a side of a second region on the top surface. A side of the second region on a bottom surface of the semiconductor substrate is shielded by using the second mask. The bottom surface, with the side of the second region thereon being shielded with the second mask, is irradiated with light ions by operating the light ion source to introduce lattice defects at a specified depth on the side of the first region on the bottom surface."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of manufacturing a semiconductor device","description":"A method of manufacturing a semiconductor device includes preparing a light ion source, a first mask and a second mask. A side of a first region on a top surface of a semiconductor substrate is shield","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9685446","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9685446","citation_suggestion":"Patentable. \"Method of manufacturing a semiconductor device\" (US-9685446). https://patentable.app/patents/US-9685446","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9685446","json":"https://patentable.app/api/llm-context/US-9685446","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T04:55:40.659Z"}