{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9685454","patent":{"patent_number":"US-9685454","title":"Method of forming 3D vertical NAND with III-V channel","assignee":null,"inventors":[],"filing_date":"2015-03-24T00:00:00.000Z","publication_date":"2017-06-20T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":24,"abstract":"Disclosed herein is 3D memory with vertical NAND strings having a III-V compound channel, as well as methods of fabrication. The III-V compound has at least one group III element and at least one group V element. The III-V compound provides for high electron mobility transistor cells. Note that III-V materials may have a much higher electron mobility compared to silicon. Thus, much higher cell current and overall cell performance can be achieved. Also, the memory device may have better read-write efficiency due to much higher carrier mobility and velocity. The tunnel dielectric of the memory cells may have an Al2O3 film in direct contact with the III-V NAND channel. The drain end of the NAND channel may be a metal-III-V alloy in direct contact with a metal region. The body of the source side select transistor could be formed from the III-V compound or from crystalline silicon."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of forming 3D vertical NAND with III-V channel","description":"Disclosed herein is 3D memory with vertical NAND strings having a III-V compound channel, as well as methods of fabrication. The III-V compound has at least one group III element and at least one grou","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9685454","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9685454","citation_suggestion":"Patentable. \"Method of forming 3D vertical NAND with III-V channel\" (US-9685454). https://patentable.app/patents/US-9685454","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9685454","json":"https://patentable.app/api/llm-context/US-9685454","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T06:06:30.827Z"}