{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9685471","patent":{"patent_number":"US-9685471","title":"Manufacturing method of thin film transistor substrate","assignee":null,"inventors":[],"filing_date":"2014-07-02T00:00:00.000Z","publication_date":"2017-06-20T00:00:00.000Z","cpc_codes":["G02F","H01L","H01L","H01L"],"num_claims":10,"abstract":"The present invention provides a manufacture method of a thin film transistor substrate. In the same photolithographic process, the via deposing process is implemented to the gate isolation layer and the etching stopper layer is patterned. That is, the photolithographic process is not implemented but the oxide semiconducting pattern is formed directly after the gate isolation layer is formed. After the etching stopper layer is formed, the gate isolation layer and the etching stopper layer are patterned in the same photolithographic process. Comparing with the manufacture method of prior art, one photolithographic process can be eliminated. Meanwhile, the aperture ratio is raised by forming an open at the transparent conducting layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Manufacturing method of thin film transistor substrate","description":"The present invention provides a manufacture method of a thin film transistor substrate. In the same photolithographic process, the via deposing process is implemented to the gate isolation layer and ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9685471","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9685471","citation_suggestion":"Patentable. \"Manufacturing method of thin film transistor substrate\" (US-9685471). https://patentable.app/patents/US-9685471","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9685471","json":"https://patentable.app/api/llm-context/US-9685471","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T10:39:28.856Z"}