{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9685479","patent":{"patent_number":"US-9685479","title":"Method of forming a shallow pinned photodiode","assignee":null,"inventors":[],"filing_date":"2015-03-31T00:00:00.000Z","publication_date":"2017-06-20T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":14,"abstract":"An image sensor with a pinned photodiode includes a photodiode formed in a substrate by implanting dopants of a first type through one or more dielectric layers formed over the substrate. A pinning layer for the photodiode may be formed by implanting dopants of a second type through the same one or more dielectric layers. The pinning layer may be formed over a photodiode region of the substrate. The concentration of dopants of the second type may have a maximum value in dielectric layers over the photodiode that exceeds the concentration of dopants of the second type in the substrate below. The photodiode and pinning layer may both be formed by implanting ions of the first and second type respectively through a dielectric layer formed after etching away a portion of another dielectric layer, having a different thickness, and having different optical transmission properties than the another dielectric layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of forming a shallow pinned photodiode","description":"An image sensor with a pinned photodiode includes a photodiode formed in a substrate by implanting dopants of a first type through one or more dielectric layers formed over the substrate. A pinning la","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9685479","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9685479","citation_suggestion":"Patentable. \"Method of forming a shallow pinned photodiode\" (US-9685479). https://patentable.app/patents/US-9685479","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9685479","json":"https://patentable.app/api/llm-context/US-9685479","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T06:06:52.350Z"}