{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9685495","patent":{"patent_number":"US-9685495","title":"Semiconductor device and method of forming IPD on molded substrate","assignee":null,"inventors":[],"filing_date":"2012-03-18T00:00:00.000Z","publication_date":"2017-06-20T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":24,"abstract":"A semiconductor device is made by depositing an encapsulant material between first and second plates of a chase mold to form a molded substrate. A first conductive layer is formed over the molded substrate. A resistive layer is formed over the first conductive layer. A first insulating layer is formed over the resistive layer. A second insulating layer is formed over the first insulating layer, resistive layer, first conductive layer, and molded substrate. A second conductive layer is formed over the first insulating layer, resistive layer, and first conductive layer. A third insulating layer is formed over the second insulating layer and second conductive layer. A bump is formed over the second conductive layer. The first conductive layer, resistive layer, first insulating layer, and second conductive layer constitute a MIM capacitor. The second conductive layer is wound to exhibit inductive properties."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device and method of forming IPD on molded substrate","description":"A semiconductor device is made by depositing an encapsulant material between first and second plates of a chase mold to form a molded substrate. A first conductive layer is formed over the molded subs","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9685495","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9685495","citation_suggestion":"Patentable. \"Semiconductor device and method of forming IPD on molded substrate\" (US-9685495). https://patentable.app/patents/US-9685495","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9685495","json":"https://patentable.app/api/llm-context/US-9685495","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T03:50:52.014Z"}